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| S S D D S S ARF1500 ARF1500 BeO 1525-xx RF POWER MOSFET N - CHANNEL ENHANCEMENT MODE * Specified 125 Volt, 27.12 MHz Characteristics: * Output Power = 750 Watts. * Gain = 17dB (Class C) * Efficiency > 75% * RoHS Compliant * * * * S G S S G S 125V 750W 40MHz The ARF1500 is an RF power transistor designed for very high power scientific, commercial, medical and industrial RF power generator and amplifier applications up to 40 MHz. High Performance Power RF Package. Very High Breakdown for Improved Ruggedness. Low Thermal Resistance. Nitride Passivated Die for Improved Reliability. MAXIMUM RATINGS Symbol VDSS ID VGS PD TJ,TSTG TL Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Device Dissipation @ TC = 25C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. All Ratings: TC = 25C unless otherwise specified. ARF1500 UNIT Volts Amps Volts Watts C 500 60 30 1500 -55 to 175 300 STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs Visolation VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) On State Drain Voltage 1 MIN TYP MAX UNIT Volts A nA mhos Volts 500 6 7.5 100 1000 400 6 TBD 3 5 7.5 (I D(ON) = 30A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 30A) RMS Voltage (60Hz Sinewave from terminals to mounting surface for 1 minute) Gate Threshold Voltage (VDS = VGS, ID = 50mA) Volts THERMAL CHARACTERISTICS Symbol Characteristic (per package unless otherwise noted) RJC RJHS Junction to Case Junction to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.) MIN TYP MAX UNIT C/W 10-2008 050-5965 Rev E 0.10 0.16 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 150V f = 1 MHz VGS = 15V VDD = 250 ID = 60A @ 25C RG = 1.6 MIN TYP MAX ARF1500 UNIT 5150 500 215 7.5 6.0 20 10 6030 650 225 pF ns FUNCTIONAL CHARACTERISTICS Symbol GPS 1 Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 27.12 MHz VGS = 0V VDD = 125V MIN TYP MAX UNIT dB % 17 70 19 75 Pout = 750W No Degradation in Output Power Pulse Test: Pulse width < 380 S, Duty Cycle < 2%. Microsemi reserves the right to change, without notice, the specifications and information contained herein. Per transistor section unless otherwise specified. 20,000 10,000 5000 CAPACITANCE (pf) Ciss 1000 500 Coss Crss 100 .1 1 10 100 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 1, Typical Capacitance vs. Drain-to-Source Voltage 60 ID, DRAIN CURRENT (AMPERES) 50 40 30 20 10 0 TJ = +25C TJ = +125C 0 2 4 6 8 10 12 14 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Transfer Characteristics ID, DRAIN CURRENT (AMPERES) VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 240 DATA FOR BOTH SIDES IN PARALLEL 100 50 OPERATION HERE LIMITED BY R (ON) DS TJ = -55C 100us 10-2008 10 5 TC =+25C TJ =+200C SINGLE PULSE 1 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Maximum Safe Operating Area 1ms 050-5965 Rev E 10ms 100ms 1.15 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0.75 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 4, Typical Threshold Voltage vs Temperature 6 5 4 3 2 1 0 10.2V ARF1500 8.2V 6.2V 4.2V 2.2V 2V 0 5 10 15 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5, Typical Output Characteristics 0.12 Z JC, THERMAL IMPEDANCE (C/W) 0.10 0.08 0.06 0.04 0.02 0 D = 0.9 0.7 0.5 0.3 0.1 0.05 10-5 10-4 Note: PDM t1 t2 SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC t 10-3 10-2 10 -1 RECTANGULAR PULSE DURATION (SECONDS) Figure 6, Maximum Effective Transient Thermal Impedance, Junction-to-Case vs. Pulse Duration 1.0 Table 1 - Typical Class AB Large Signal Impedance -- ARF1500 F (MHz) 2.0 13.5 27 40 Zin () 6.7-j 12 0.45 -j 2.5 0.22 -j 0.67 0.2 + j .19 ZOL () 7.5 -j 0.8 7.1 -j 1.7 6.1 -j 3.0 5.0 -j 3.6 Zin - Gate shunted with 25 IDQ = 100mA ZOL - Conjugate of optimum load for 750 Watts output at Vdd = 125V Clamp 1.065 .250 S D S .500 Thermal Considerations and Package Mounting: The rated 1500W power dissipation is only available when the package mounting surface is at 25C and the junction temperature is 175C. The thermal resistance between junctions and case mounting surface is 0.10C/W. When installed, an additional thermal impedance of 0.06C/W between the package base and the mounting surface is smooth and flat. Thermal joint compound must be used to reduce the effects of small surface irregularities. The heatsink should incorporate a copper heat spreader to obtain best results. The package is designed to be clamped to a heatsink. A clamped joint maintains the required mounting pressure while allowing for thermal expansion of both the device and the heat sink. A simple clamp, and two 6-32 (M3.5) screws can provide the minimum 125 lb. required mounting force. T=4-6 in-lb. Please refer to App Note 1802 "Mounting Instructions for Flangeless Packages." Heat Sink ARF15-BeO 1525-xx 1.065 .045 S G S .500 .005 .207 .375 .105 typ. .207 HAZARDOUS MATERIAL WARNING D G S 050-5965 Rev E The ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area . These devices must never be thrown away with general industrial or domestic waste. 10-2008 C7 C9 L4 L5 C8 C10 + 125V Output RF Input L3 L1 L2 TL1 C4 C5 R1 C1 C2 C3 C11 ARF1500 27.12 MHz Test Circuit C1,C11 ARCO 465 50-450pF mica trimmer C2 1500pF ATC 700B C3 2x 3300 pF ATC 700B C4 8200pF 500V NPO ceramic C5 150pF 500V NPO C7-C8 .1uF 250V ceramic chip C9- C10 1000pF Z5U 500V L1 120 nH 5t #20 .25"d .3"l L2 20 nH #20 hairpin loop .3" x .125" L3 175 nH - 4t #10 .625" dia .875" l L4 2uH - 22t #24 enam. .312" dia. L5 500nH 2t on 850u .5" bead R1 51 .5W TL1 .25" x 1.75" (30 ) Stripline 27 MHz Test Amp ARF1500 BeO ARF1500 135-05 J1 J2 RF 3-02 Parts placement 27 MHz Test Amp ARF1500 050-5965 Rev E 10-2008 RF 3-02 1:1 pcb artwork |
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